PART |
Description |
Maker |
ULN2005 ULN2003 ULN2003L ULN2005A ULN2005L ULN2003 |
HIGH-VOLTAGE, HIGH-CURRENT DARLINGTON ARRAYS 高电压,大电流达林顿阵列 Flash Memory IC; Memory Size:64Mbit; Access Time, Tacc:90ns; Package/Case:48-TSOP; Supply Voltage Max:3V; Leaded Process Compatible:Yes; Peak Reflow High Voltage / High Current Darlington Transistor Arrays HIGH-VOLTAGE/ HIGH-CURRENT DARLINGTON ARRAYS (ULN2001A - ULN2005A) High Voltage / High Current Darlington Arrays 500 mA, 50 V, 7 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR
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List of Unclassifed Man... Electronic Theatre Controls, Inc. Sprague Electric ETC[ETC] List of Unclassifed Manufacturers VISHAY SPRAGUE
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AUIRS2112S |
The AUIRS2112S is a high voltage, high speed power MOSFET and IGBT driver with independent high- and lowside referenced output channels.
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International Rectifier
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BUT70W 8602 |
HIGH VOLTAGE NPN POWER TRANSISTOR HIGH POWER NPN TRANSISTOR From old datasheet system HIGH VOLTAGE NPN POWER TRANSISTOR 8-bit MCU for automotive, 16 Kbyte Flash/ROM, 10-bit ADC, 4 timers, SPI, SCI
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ST Microelectronics STMICROELECTRONICS[STMicroelectronics]
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BFN22 Q62702-F1024 Q62702-F102 |
NPN Silicon High-Voltage Transistor (Suitable for video output stages in TV sets and switching power supplies High breakdown voltage) From old datasheet system
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SIEMENS AG SIEMENS[Siemens Semiconductor Group]
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2SA1871 2SA1871-GA1-AZ |
PNP SILICON TRIPLE DIFFUSED TRANSISTOR FOR HIGH-SPEED HIGH-VOLTAGE SWITCHING 进步党三重扩散硅晶体管高速高压开 1 A, 600 V, PNP, Si, POWER TRANSISTOR High-speed high-voltage switching PNP 3-diffusion trans
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NEC, Corp. NXP Semiconductors N.V. NEC[NEC]
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APT1001RBLC APT1001RSLC APT1001 |
POWER MOS VI 1000V 11A 1.000 Ohm Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-4 RoHS Compliant: No Power MOS VI is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
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ADPOW[Advanced Power Technology] Advanced Power Technology Ltd.
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2N6031 2N5631 2N5631-D |
POWER TRANSISTORS COMPLEMENTARY SILICON High-Voltage - High Power Transistors High-Voltage High-Power Transistors
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ONSEMI[ON Semiconductor]
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APT30GT60BRD |
The Thunderbolt IGBT?/a> is a new generation of high voltage power IGBTs. Thunderbolt IGBT & FRED 600V 55A The Thunderbolt IGBT is a new generation of high voltage power IGBTs. The Thunderbolt IGBT⑩ is a new generation of high voltage power IGBTs. The Thunderbolt IGBTis a new generation of high voltage power IGBTs.
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ADPOW[Advanced Power Technology] Advanced Power Technology Ltd.
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SML20W65 SML20B56 |
HIGH POWER TERMINATION 56 A, 200 V, 0.045 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
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TT electronics Semelab, Ltd. Seme LAB
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2SC5027-X-TF3-T 2SC5027-R-TA3-T 2SC5027-X-TA3-T 2S |
HIGH VOLTAGE AND HIGH RELIABILITY 800 V, NPN, Si, POWER TRANSISTOR, TO-220AB
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友顺科技股份有限公司 UTC[Unisonic Technologies] http:// Unisonic Technologies Co., Ltd. UNISONIC TECHNOLOGIES CO LTD
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RM600DY-66S RM600DY-66S09 |
HIGH VOLTAGE DIODE MODULE HIGH POWER SWITCHING USE INSULATED TYPE
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Mitsubishi Electric Semiconductor
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RM1200HE-66S |
HIGH VOLTAGE DIODE MODULE HIGH POWER SWITCHING USE INSULATED TYPE
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Mitsubishi Electric Semiconductor
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